 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary Release 1.2 W High Efficiency Power Amplifier 800 - 960 MHz Features * * * * * SOIC-8 Thermally Efficient Plastic Package +30.8 dBm Typical Power Out Greater than 50% Typical Power Added Efficiency 21 dB typical Power Gain Flexible External Output Matching AM52-0001 V1.00 SOIC-8P .2284/.2440 (5.80/6.20) .010(.25)M B M .1497/.1574 (3.80/4.00) -B- Description M/A-COM's AM52-0001 is a GaAs power amplifier in a thermally efficient low cost SOIC-8 plastic package. The AM52-0001 is designed for high efficiency 1.2 W output power and 21 dB of associated gain in the 800-960 MHz frequency band. The AM52-0001 is unconditionally stable in both small and large signal operation. It features flexible biasing for improved dynamic range and off-chip matching for improved efficiency and flexibility. The AM52-0001 is specifically designed for high efficiency final output power amplification in FM, GFSK and FSK type systems, such as AMPS, ETACS, NTACS, CT1, CDPD and ISM. M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron gate length GaAs MESFET power process. The process features full passivation for increased performance and reliability. The AM52-0001 can be used with standard automated SMT assembly equipment (See M/A-COM application note M558). .1890/.1968 (4.80/5.00) -A- CHAMFER .0532/.0688 (1.35/1.75) .004 (.10) .050 (1.27) .013/.020 (8 PL) (.33/.51) .010 (.25) M C A M B S -C- Ordering Information Part Number AM52-0001 AM52-0001TR AM52-0001SMB Package SOIC-8 Lead Plastic Forward Tape and Reel * Designer's Kit * If specific reel size is required, consult factory for part number assignment. Electrical Specifications: VD1 = VD2 = 4.8V 5%, TA = +25C, Freq. = 824-849 MHz, VGG = VG2 = VG1 adjusted for 150 mA quiescent drain Current. Parameter Linear Gain Output Power Power Gain Power Added Efficiency Second Harmonic Third Harmonic Noise Power1 Stability2 Load Mismatch3 Gate Current Adjustable Power Control (APC) Test Conditions Pin -20 dBm Pin = 10 dBm Units dB dBm dB % dBc dBc dBm VSWR VSWR mA Min. Typ. 29 30.8 21 55 -30 -50 -92 Max. 10:1 10:1 5 27 VD1 = 0 4.8V VD2 = 4.8 V dB 1. Noise power (30 KHz RBW), 45 MHz above TX Freq range, measured under rated output power conditions. 2. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output VSWR of 10:1 any phase, VDD = 4.8 V. 3. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360 rotation in 10 sec.) with VDD up to 6V. . Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: 1 Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 1.2 W High Efficiency Power Amplifier Absolute Maximum Ratings 1 Parameter Input Power 2 2 AM52-0001 V1.00 Functional Block Diagram (AMPS 824-849 MHz) Absolute Maximum +23 dBm VDD = + 10 Volts VGG = - 6 Volts Operating Voltage C2 C7 C3 1 VG1 C11 2 7 T2 C9 3 6 C8 4 VD1 C6 C1 9 C4 C5 5 VG2 8 T1 VD2 Junction Temperature Storage Temperature 3 +150 C -65 C to +150 C -40 C to +85 C Operating Temperature R F IN C10 RF OUT 1. Exceeding any one or combination of these limits may cause permanent damage. 2. Ambient Temperature (TA) = + 25C 3. See temperature derating curve. External Circuitry Parts List Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 Pin Name VG1 RF IN GND VD1 VG2 GND RF OUT VD2 Puck Description Negative supply voltage, First stage RF Input of the amplifier DC and RF Ground Positive supply voltage, First stage Negative supply voltage, First stage DC and RF Ground RF Output of the amplifier Positive supply voltage, Second stage DC and RF Ground (AMPS 824-849 MHz) Part Value Purpose C1 - C3 C4 - C7 C8 C9, C10 C11 T1 T2 220 pF 0.1 uF 8 pF 56 pF 1.0 uF 0.470" 0.250" By-Pass By-Pass Power Tuning DC Block By-Pass Matching Transmission Lines (50 ) Recommended PCB Configuration Layout View (AMPS 824-849 MHz) 1.) The recommended layout is specifically for the AMPS application. It shows EIA code size 0603 standard SMT capacitors with the exception of C11 which is a EIA code size 3528 2.) The location of C9, C10 and C11 is not critical to the performance of the amplifier. Cross Section View RF Traces + Components RF Ground C2 DC Routing Customer Defined C11 C7 C3 0.47" (T1) C10 C6 C1 C4 0.25" (T2) C8 The PCB dielectric between RF traces and RF ground layers should be chosen to reduce RF discontinuities between 50 lines and package pins. M/A-COM recommends an FR-4 dielectric thickness of 0.008"(0.2 mm) yielding a 50 line width of 0.015"(0.38 mm). The recommended metalization thickness is 1 oz. copper and ground metalization thickness is 2 oz.. Shaded traces are vias to DC Routing layer and traces on DC Routing layer. Biasing Procedure The AM52-0001 requires that VGG bias be applied prior to ANY VDD bias. Permanent damage will occur if this procedure is not followed. All FETs in the PA will draw IDSS and damage internal circuitry. Resistance added in seiries with Vg1 and Vg2 may degrade performance. C5 C9 Specifications Subject to Change Without Notice. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: M/A-COM Inc. Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 1.2 W High Efficiency Power Amplifier Typical Power Data (AMPS 824 - 849 MHz) AM52-0001 V1.00 Test Conditions (unless otherwise noted) : TRoom = +25C, TCold = -40C, THot = +85C, Pin = 10 dBm, Freq. = 835 MHz, VDD = VD1 = VD2 = 4.8V and VGG = VG1 = VG2 adjusted for 150 mA total quiescent drain current. External output matching circuitry is optimized for the 824 - 849 MHz AMPS application. OUTPUT POWER VS INPUT POWER 35 GAIN VS INPUT POWER 35 Room Cold 31 Cold Pout (dBm) 31 Gain (dB) 27 Room 27 Hot 23 23 19 Hot 19 15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 Pin (dBm) Pin (dBm) PAE VS INPUT POWER 70 60 50 PAE (%) 40 30 20 10 0 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 Hot -4 IG2 (mA) Cold Room -2 0 GATE CURRENT VS INPUT POWER Room -1 Cold Hot -3 -5 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 Pin (dBm) Pin (dBm) DRAIN CURRENTS VS INPUT POWER 50 1000 33.5 OUTPUT POWER VS FREQUENCY Cold Room 40 Cold Id1 (mA) Id2 (mA) 30 Room 600 800 32.5 Pout (dBm) 31.5 Hot 20 400 30.5 10 Hot -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 200 0 0 29.5 800 810 820 830 840 850 860 870 880 890 900 Frequency (MHz) Pin (dBm) Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: 3 Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 1.2 W High Efficiency Power Amplifier Typical Power Data cont'd AM52-0001 V1.00 PAE VS FREQUENCY 70 68 66 64 PAE (%) 62 60 58 56 54 52 50 800 810 820 830 840 850 860 870 880 890 900 Hot 21 20.5 Room Gain (dB) Cold 24 23.5 23 22.5 22 GAIN VS FREQUENCY Cold Room 21.5 Hot 20 800 810 820 830 840 850 860 870 880 890 900 Frequency (MHz) Frequency (MHz) OUTPUT POWER, GAIN, AND PAE VS VDD 35 33 Pout (dBm) & Gain (dB) 31 29 27 25 23 21 19 17 15 3 3.5 4 4.5 5 Vdd (V) 5.5 6 6.5 Gain PAE Pout 65 64 63 25 62 Pout (dBm) PAE (%) 61 60 59 58 57 56 55 0 -5 0 20 15 10 5 35 30 OUTPUT CONTROL POWER 1 2 3 Vd1(V) 4 5 6 SECOND & THIRD HARMONICS VS FREQUENCY 70 60 50 40 30 2fo 20 10 0 800 820 840 860 880 900 920 940 960 Frequency (MHz) Dissipated Power (W) 3fo 6 5 4 3 2 1 0 0 TEMPERATURE DERATING CURVE Harmonic Rejection (dBc) 25 50 75 100 125 Ambient Temperature (C) 150 175 Note: Dissipated power in the above curve refers to power dissipated in output FET and is defined as (Pdiss=Vdd*Id2-Pout). Typical Thermal Resistance (jc) = 25C/W. Specifications Subject to Change Without Notice. 4 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: M/A-COM Inc. Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 1.2 W High Efficiency Power Amplifier Designer's Kit AM52-0001SMB The AM52-0001SMB Designer's Kit allows for immediate evaluation of M/A-COM's AM52-0001. The evaluation board consists of an AM52-0001, recommended external surface mount circuitry, RF connectors, and a DC multi-pin connector, all mounted to a multi-layer FR-4 PCB. Other items included in the Designer's Kit, a floppy disk (with typical performance data and a DXF file of AM52-0001 V1.00 the recommended PCB layout) and any additional Application Notes. The AM52-0001SMB evaluation PCB is illustrated below with all functional ports labeled. AMPLIFIER PCB DC Connector Pinout PCB DC Connector 1 2 3 4 5 6 7 8 9 10 VD1 4 VG2 5 GND Function Device Pin Number 6 & 9 (Puck) PCB DC Connector 11 12 13 14 15 16 17 18 19 20 GND 6 & 9 (Puck) VG1 1 VD2 8 Function Device Pin Number Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: 5 Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 1.2 W High Efficiency Power Amplifier Designer's Kit Biasing Procedure In order to prevent transients which may damage the MMIC, please adhere to the following procedure. Turn on all power supplies and set all voltages to 0 volts BEFORE connecting the power supplies to the DC connector. Apply a -5.0 volt supply to DC connector pin 17 (VG1) Apply a -5.0 volt supply to DC connector pin 6 (VG2) Apply a +5.0 volt supply to the DC connector pin 9 (VD1) Apply a +5.0 volt supply to the DC connector pin 14 (VD2) Adjust all VGG supplies to -5 volts Adjust all VDD supplies to +4.8 volts Adjust VGG = VG1 = VG2 supply for desired VDD quiescent current (typically 150 mA) To power off, reverse above procedure 1) 2) 3) 4) Set VD1 & VD2 to 0 volts Set VG1 & VG2 to 0 volts Disconnect bias lines from DC connector Turn off power supplies AM52-0001 V1.00 Evaluation PCB + RF Connector Losses Port Reference PA IN PA OUT Loss (dB) 0.1 0.1 The DC connector on the Designer's Kit PCB allows convenient DC line access. This is accomplished by one or more of the following methods: 1. A mating female multi-pin connector (Newark Electronics Stock # 46F-4658, not included) 2. Wires soldered to the necessary pins (not included) 3. Clip leads (not included) 4. A combination of clip leads or wires and jumpers (jumpers included as required). Specifications Subject to Change Without Notice. 6 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3226-8761 Fax +81 3 3226-8769 Europe: M/A-COM Inc. Tel. +44 (1344) 869-595 Fax +44 (1344) 300 020 |
Price & Availability of AM52-0001TR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |